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J Physiol Volume 586, Number 23, 5727-5741, December 1, 2008 DOI: 10.1113/jphysiol.2008.160622
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NEUROSCIENCE

Voltage-dependent gating of NR1/2B NMDA receptors

Richard J. Clarke1 and Jon W. Johnson1

1 Department of Neuroscience and Center for Neuroscience, University of Pittsburgh, Pittsburgh, PA 15260, USA

Ligand-gated ion channels are activated by agonist binding, but may also be modulated by membrane voltage. N-Methyl-D-aspartate receptors (NMDARs) exhibit especially strong voltage dependence due to channel block by external Mg2+ (Mgo2+). Here we demonstrate that activity of NMDARs composed of NR1 and NR2B subunits (NR1/2B receptors) is enhanced by depolarization even in 0 Mgo2+, causing slow current relaxations in response to rapid voltage changes. We present a kinetic model of receptor activation that incorporates voltage-dependent gating-associated NR2B subunit conformational changes. The model accurately reproduces current relaxations during depolarizations and subsequent repolarizations in 0 Mgo2+. Model simulations in physiological Mgo2+ concentrations show that voltage-dependent receptor gating also underlies the slow component of Mgo2+ unblock, a phenomenon that previously was shown to influence Mgo2+ unblock kinetics during dendritic spikes. We propose that voltage-dependent gating of NR1/2B receptors confers enhanced voltage and time dependence on NMDAR-mediated signalling.

(Received 28 July 2008; accepted after revision 14 October 2008; first published online 20 October 2008)
Corresponding author J. W. Johnson: Department of Neuroscience and Center for Neuroscience, University of Pittsburgh, Pittsburgh, PA 15260, USA. Email: jjohnson{at}pitt.edu


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A tingle of extra excitement with voltage dependence of NMDA receptor activation
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